GaN Systems

GaN Systems, founded in 2008 and headquartered in Ottawa, Canada, has offices in the United Kingdom, Germany, Japan, and the United States. It is a fabless semiconductor company. Its first-class system design can highlight the advantages of GaN in power conversion and control applications. In order to overcome the limitations of silicon in terms of conversion speed, temperature, voltage and current, GaN Systems has developed a complete set of GaN power conversion devices suitable for various markets.

The unique patented technology of GaN Systems, IslandTechnology ® Make it smaller and more efficient than similar products, and overcome the challenges of cost, performance and manufacturability at the same time. Jim Witham, CEO of GaN Systems, was the CEO of Neosonic and Fultec Semiconductor. He has an MBA from Harvard Business School and a bachelor’s and master’s degree in mechanical engineering from Stanford University.

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GaN Transistors – 100 V E-HEMT

Part	I_DS	R_DS(on)	Q_G	Dimensions	Package Cooling
GS61004B	38 A	16 mΩ	3.3 nC	4.6 x 4.4 x 0.51 mm	Bottom-Side
GS61008P	90 A	7 mΩ	8 nC	7.6 x 4.6 x 0.51 mm	Bottom-Side
GS61008T	90 A	7 mΩ	8 nC	7.0 x 4.0 x 0.54 mm	Top-Side

GaN Transistors – 100 V E-HEMT

Part	I_DS	R_DS(on)	Q_G	Dimensions	Package Cooling
GS-065-004-1-L	4 A	450 mΩ	0.8 nC	5.0 x 6.0 x 0.85 mm	Bottom-Side
GS-065-008-1-L	8 A	225 mΩ	1.5 nC	5.0 x 6.0 x 0.85 mm	Bottom-Side
GS-065-011-1-L	11 A	150 mΩ	2.2 nC	5.0 x 6.0 x 0.85 mm	Bottom-Side
GS-065-011-2-L	11 A	150 mΩ	2.2 nC	8.0 x 8.0 x 0.9 mm	Bottom-Side
GS-065-018-2-L	18 A	78 mΩ	4 nC	8.0 x 8.0 x 0.9 mm	Bottom-Side
GS-065-030-2-L	30 A	50 mΩ	6.7 nC	8.0 x 8.0 x 0.9 mm	Bottom-Side
GS66502B	7.5 A	200 mΩ	1.6 nC	5.0 x 6.6 x 0.51 mm	Bottom-Side
GS66504B	15 A	100 mΩ	3.3 nC	5.0 x 6.6 x 0.51 mm	Bottom-Side
GS66506T	22.5 A	67 mΩ	4.5 nC	5.6 x 4.5 x 0.54 mm	Top-Side
GS66508B	30 A	50 mΩ	6.1 nC	7.0 x 8.4 x 0.51 mm	Bottom-Side
GS66508T	30 A	50 mΩ	6.1 nC	7.0 x 4.5 x 0.54 mm	Top-Side
GS-065-060-5-B-A	60 A	25 mΩ	14 nC	11.0 x 9.0 x 0.63 mm	Bottom-Side
GS-065-060-5-T-A	60 A	25 mΩ	14 nC	9.0 x 7.6 x 0.69 mm	Top-Side
GS-065-060-3-B	60 A	25 mΩ	14 nC	11.0 x 9.0 x 0.45 mm	Bottom-Side
GS66516B	60 A	25 mΩ	14.2 nC	11.0 x 9.0 x 0.54 mm	Bottom-Side
GS-065-060-3-T	60 A	25 mΩ	14 nC	9.2 x 7.8 x 0.49 mm	Top-Side
GS66516T	60 A	25 mΩ	14.2 nC	9.0 x 7.6 x 0.54 mm	Top-Side
GS-065-150-1-D2	150 A	10 mΩ	33 nC	12.6 x 5.6 x 0.3 mm	Die

Hot GaN Systems Parts

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