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Shenzhen Maspower Semiconductor Co., Ltd.

Maspower is a leading provider of semiconductor power device chips, specializing in R&D and innovative solutions. Recognized as a national high-tech enterprise, it is known for its focus on cutting-edge technology, precision, and unique capabilities. With headquarters in Shenzhen and R&D centers in both Shenzhen and Shanghai, Maspower offers a range of products including ultra-high voltage MOSFETs, IGBTs, and FRDs.

Maspower’s primary focus is the development of ultra-high voltage MOSFETs, ranging from 800V to 4700V, designed to address critical shortages for its customers. It serves key industries such as industrial power supplies, photovoltaic energy storage, instrumentation, medical power supplies, and the State Grid.

featured
electronic components

MOSFET

900V-4700V
SJ MOS, HV MOS, LV MOS
1200V Sic MOS

Fs-Trench IGBT

330V-1200V
NPT-IGBT, FS-IGBT

PWM, AC-DC

10W-100W
AC-DC flyback power supply

FRD

200V-2000V
Fast Recovery Diodes, Ultra Fast
Recovery Diodes

Applications

Welding Equipment

AC arc welding
DC welding
TIG, MIG, SMAW
Cutting Machine

Industrial Control Automation

Frequency Converter
Industrial robot
Servo driver
Electronic load

Renewable Energy

PV Inverter
BMS
Energy storage
Wind power generation

Electric Vehicle

Rail transit
Charging pile
Motor drive
Power inverter
Range extender

Power Supply

Electric power supply
Communication power
High frequency heating
RF generator
UPS

Medical Equipment

AED
CT

Industrial Application

RF Generator

MOSFET: MS50N100HGF4, MS170N65HGF4, MS170N25HGF4

FRD: EST60BN120SN, EST100BN120SN

DC Electronic Loads

Low voltage MOS: MS50N20FC, MS20N50FC, MS100N20FC

High voltage MOS: MS9N150H, MS12N100FC

Welder

IGBT: MSG40T120FH, MSG60T65HHC0

MOSFET: MS5N100, MS4N1350, MSN4688

FRD:ESTF80D22U, ESTF100SS60S, ESQ100QN60SN

Digital Generator

IGBT: 650V, 1200V

FRD: 600V, 1200V, 1500V

MOSFET: 1000V

Frequency Converter

IGBT: MSG15T120FQC, MSG25T120FPC, MSG40T120FQC, MSG15T65FL, MSG20T65FQS

MOS: MS5N100S, MS4N1350, MS10N100FB

FRD: ESTF45D60UHB

BJT: MSJ8N08FD, MSJ8P08FD

PV Inverter

IGBT: 650V, 1200V

MOSFET: MS5N100S, MS6N120FT, MS8N120FT, MS4N1350, MS9N120H1, MS5N170FC

FRD: 600V, 1200V

AED

MOSFET: 2000V, 2500V

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